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64M x 64 SDRAM DIMM based on 32M x 8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

General Description
The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S6453CTS consists of sixteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S6453CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

* Performance Range
133MHz@CL=3/100MHz@CL=2Burst mode operation
* Auto & self refresh capability (8192 Cycles/64ms)
* LVTTL compatible inputs and outputs
* Single 3.3V±0.3V power supply
* MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
* All inputs are sampled at the positive going edge of the system clock
* Serial presence detect with EEPROM
* PCB : Height (1,375mil), double sided component

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